Method of fabricating reflective spatial light modulator having high contrast ratio

ABSTRACT

The contrast offered by a spatial light modulator device may be enhanced by positioning nonreflective elements such as supporting posts and moveable hinges, behind the reflecting surface of the pixel. In accordance with one embodiment, the reflecting surface is suspended over and underlying hinge-containing layer by integral ribs of the reflecting material defined by gaps in a sacrificial layer. In accordance with an alternative embodiment, the reflecting surface is separated from the underlying hinge by a gap formed in an intervening layer, such as oxide. In either embodiment, walls separating adjacent pixel regions may be recessed beneath the reflecting surface to further reduce unwanted scattering of incident light and thereby enhance contrast.

BACKGROUND OF THE INVENTION

Spatial light modulators (SLMs) have numerous applications in the areasof optical information processing, projection displays, video andgraphics monitors, televisions, and electrophotographic printing.Reflective SLMs are devices that modulate incident light in a spatialpattern to reflect an image corresponding to an electrical or opticalinput. The incident light may be modulated in phase, intensity,polarization, or deflection direction. A reflective SLM is typicallycomprised of an area or two-dimensional array of addressable pictureelements (pixels) capable of reflecting incident lights. Source pixeldata is first processed by an associated control circuit, then loadedinto the pixel array, one frame at a time.

SLM devices are typically fabricated from a plurality of moveablereflecting elements arranged in the form of an array of pixels. Theperformance of the resulting device depends in part upon the contrastbetween the intensity of light reflected from the pixel regions, and theintensity of the background. The intensity of background light may beenhanced by the presence of light-reflecting surfaces other than thepixel elements.

Accordingly, there is a need in the art for improved methods offabricating SLM devices and methods of forming same which producegreater contrast between the image produced and background lightintensity.

BRIEF SUMMARY OF THE INVENTION

The contrast offered by a spatial light modulator device may be enhancedby positioning nonreflective elements such as supporting posts andmoveable hinges, behind the reflecting surface of the pixel. Inaccordance with one embodiment, the reflecting surface is suspended overand underlying hinge-containing layer by ribs of the reflecting materialdefined by gaps in a sacrificial layer. In accordance with analternative embodiment, the reflecting surface is separated from theunderlying hinge by a gap formed in an intervening layer, such as oxide.In either embodiment, walls separating adjacent pixel regions may berecessed beneath the reflecting surface to further reduce unwantedscattering of incident light and thereby enhance contrast.

An embodiment of a method in accordance with the present invention forfabricating a reflecting pixel, comprises, providing a silicon layerbearing a conducting layer and supported by an underlying post over aCMOS substrate, and etching through the conducting layer and the siliconlayer in gaps of a first photoresist mask to define openings adjacent toa moveable hinge portion in the silicon layer. A reflecting material isdeposited within via holes defined by a second photoresist maskpatterned over the conducting layer; and the second photoresist mask isremoved to leave the reflecting material supported over the conductinglayer and hinge by projections at the former location of the via holes.

An alternative embodiment of a method in accordance with the presentinvention for fabricating a reflecting pixel, comprises, providing asilicon layer supported by an underlying post over a CMOS substrate,forming a dielectric layer over the silicon layer, and etching throughthe dielectric layer and the silicon layer in gaps of a firstphotoresist mask to define openings adjacent to a moveable hinge portionin the silicon layer. The dielectric layer is removed over the moveablehinge, and photoresist material is formed within the openings. Areflecting material is deposited over the dielectric and the photoresistmaterial, and the photoresist material is removed to leave thereflecting material separated from the moveable hinge by a space.

An embodiment of a reflecting structure in accordance with the presentinvention, comprises, a moveable stack overlying a post and anunderlying CMOS substrate comprising an electrode. The moveable stackcomprises a silicon layer defining a moveable hinge portion, and areflecting surface supported over the moveable hinge.

These and other objects and features of the present invention and themanner of obtaining them will become apparent to those skilled in theart, and the invention itself will be best understood by reference tothe following detailed description read in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram that illustrates the general architecture of aspatial light modulator according to one embodiment of the invention.

FIGS. 2 a and 2 b are perspective views of a single micro mirror.

FIGS. 3 a and 3 b are perspective views showing the top and sides of amicro mirror array.

FIGS. 4 a and 4 b are perspective views showing the bottom and sides ofthe micro mirror array.

FIGS. 5 a and 5 b are top views of the micro mirror array.

FIGS. 6 a and 6 b are bottom views of the micro mirror array.

FIGS. 7 a-7 d are perspective views showing the top, bottom, and sidesof a single mirror of an alternate embodiment of the micro mirror array.

FIGS. 8 a-8 d are perspective views showing the top and bottom of thealternate micro mirror array.

FIG. 9 a is a flowchart illustrating a preferred embodiment of how thespatial light modulator is fabricated.

FIGS. 9 b through 9 j are block diagrams illustrating the fabrication ofthe spatial light modulator in more detail.

FIG. 10 illustrates the generation of the mask and the etching thatforms the cavities in the first substrate in more detail.

FIG. 11 is a perspective view of one embodiment of the electrodes formedon the second substrate.

FIG. 12 is a perspective view showing the micro mirror array on thefirst substrate positioned over the electrodes and other circuitry onthe second substrate.

FIG. 13 illustrates a simplified embodiment of a mask that is used inetching the upper surface of the first substrate.

FIG. 14 is across-section of a portion of the two substrates bondedtogether.

FIG. 15A shows a simplified plan view of one embodiment of a reflectingpixel element of spatial light modulator (SLM) in accordance with thepresent invention.

FIG. 15B shows a cross-sectional view of the reflecting pixel element ofFIG. 15A, taken along the line B-B′.

FIG. 15C shows a cross-sectional view of the reflecting pixel element ofFIG. 15A, taken along the line of C-C′.

FIG. 15D shows a plan view of the substrate portion of the reflectingpixel element of FIG. 15A, with the reflecting pixel removed.

FIG. 15E shows a cross-sectional view of the substrate of FIG. 15D,taken along the line E-E′.

FIGS. 15F-N show simplified cross-sectional views of one embodiment of aprocess flow for fabricating a SLM device in accordance with the presentinvention.

FIGS. 16A-F show simplified cross-sectional views of an alternativeembodiment of a process flow for fabricating a SLM device in accordancewith the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Spatial Light Modulator Overview:

FIG. 1 is a diagram that illustrates the general architecture of an SLM100 according to one embodiment of the invention.

The reflective spatial light modulator (“SLM”) 100 has an array 103 ofdeflectable mirrors 202. Individual mirrors 202 can be selectivelydeflected by applying a voltage bias between that mirror and acorresponding electrode 126. The deflection of each mirror 202 controlslight reflected from a light source to a video display. Thus,controlling the deflection of a mirror 202 allows light striking thatmirror 202 to be reflected in a selected direction, and thereby allowscontrol of the appearance of a pixel in the video display.

The illustrated embodiment has three layers. The first layer is a mirrorarray 103 that has a plurality of deflectable micro mirrors 202. In onepreferred embodiment; the micro-mirror array 103 is fabricated from afirst substrate 105 that is a single material, such as single crystalsilicon.

The second layer is an electrode array 104 with a plurality ofelectrodes 126 for controlling the micro-mirrors 202. Each electrode 126is associated with a micro-mirror 202 and controls the deflection ofthat micro-mirror 202. Addressing circuitry allows selection of a singleelectrode 126 for control of the particular micro-mirror 202 associatedwith that electrode 126.

The third layer is a layer of control circuitry 106. This controlcircuitry 106 has addressing circuitry, which allows the controlcircuitry 106 to control a voltage applied to selected electrodes 126.This allows the control circuitry 106 to control the deflections of themirrors 202 in the mirror array 103 via the electrodes 126. Typically,the control circuitry 106 also includes a display control 108, linememory buffers 110, a pulse width modulation array 112, and inputs forvideo signals 120 and graphics signals 122. A microcontroller 114,optics control circuitry 116, and a flash memory 118 may be externalcomponents connected to the control circuitry 106, or may be included inthe control circuitry 106 in some embodiments. In various embodiments,some of the above listed parts of the control circuitry 106 may beabsent, may be on a separate substrate and connected to the controlcircuitry 106, or other additional components may be present as part ofthe control circuitry 106 or connected to the control circuitry 106.

In one embodiment, both the second layer 104 and the third layer 106fabricated using semiconductor fabrication technology on a single secondsubstrate 107. That is, the second layer 104 is not necessarily separateand above the third layer 106. Rather the term “layer” is an aid forconceptualizing different parts of the spatial light modulator 100. Forexample, in one embodiment, both the second layer 104 of electrodes isfabricated on top of the third layer of control circuitry 106, bothfabricated on a single second substrate 107. That is, the electrodes126, as well as the display control 108, line memory buffers 110, andthe pulse width modulation array 112 are all fabricated on a singlesubstrate in one embodiment. Integration of several functionalcomponents of the control circuitry 106 on the same substrate providesan advantage of improved data transfer rate over conventional spatiallight modulators, which have the display control 108, line memorybuffers 110, and the pulse width modulation array 112 fabricated on aseparate substrate. Further, fabricating the second layer of theelectrode array 104 and the third layer of the control circuitry 106 ona single substrate 107 provides the advantage of simple and cheapfabrication, and a compact final product.

After the layers 103, 104, and 106 are fabricated, they are bondedtogether to form the SLM 100. The first layer with the mirror array 103covers the second and third layers 104, 106. The area under the mirrors202 in the mirror array 103 determines how much room there is beneaththe first layer 103 for the electrodes 126, and addressing and controlcircuitry 106. There is limited room beneath the micro mirrors 202 inthe mirror array 103 to fit the electrodes 126 and the electroniccomponents that form the display control 108, line memory buffers 110,and the pulse width modulation array 112. The present invention usesfabrication techniques (described more fully below) that allow thecreation of small feature sizes, such as processes that allowfabrication of features of 0.18 microns, and processes that allow thefabrication of features of 0.13 microns or smaller. Conventional spatiallight modulators are made through fabrication processes that do notallow such small features. Typically, conventional spatial lightmodulators are made through fabrication processes that limit featuresize to approximately 1 micron or larger. Thus, the present inventionallows the fabrication of many more circuit devices, such astransistors, in the limited area beneath the micro mirrors of the mirrorarray 103. This allows integration of items such as the display control108, line memory buffers 110, and the pulse width modulation array 112on the same substrate as the electrodes 126. Including such controlcircuitry 106 on the same substrate 107 as the electrodes 126 improvesthe performance of the SLM 100.

In other embodiments, various combinations of the electrodes 126 andcomponents of the control circuitry may be fabricated on differentsubstrates and electrically connected.

The Mirror:

FIG. 2 a is a perspective view of a single micro mirror 202. In onepreferred embodiment, the micro mirror 202 is fabricated from a wafer ofa single material, such as single crystal silicon. Thus, the firstsubstrate 105 in such an embodiment is a wafer of single crystalsilicon. Fabricating the micro mirror 202 out of a single material wafergreatly simplifies the fabrication of the mirror 202. Further, singlecrystal silicon can be polished to create smooth mirror surfaces thathave an order of magnitude smoother surface roughness than those ofdeposited films. Mirrors 202 fabricated from single crystal silicon aremechanically rigid, which prevents undesired bending or warping of themirror surface, and hinges fabricated from single crystal silicon aredurable, flexible, and reliable. In other embodiments, other materialsmay be used instead of single crystal silicon. One possibility is theuse of another type of silicon (e.g. polysilicon, or amorphous silicon)for the micro mirror 202, or even making the mirror 202 completely outof a metal (e.g. an aluminum alloy, or tungsten alloy).

The micro mirror 202 has a top mirror plate 204. This mirror plate 204is the portion of the micro mirror 202 that is selectively deflected byapplying a voltage bias between the mirror 202 and a correspondingelectrode 126. In one embodiment this reflective mirror plate 204 issubstantially square in shape, and approximately fifteen microns byfifteen microns, for an approximate area of 225 square microns, althoughother shapes and sizes are also possible. In one preferred embodiment, alarge proportion of the surface area of the micro mirror array 103 ismade up of the areas of the mirror plates 204 of the micro mirrors 202.

The mirror plate 204 has a reflective surface that reflects light from alight source at an angle determined by the deflection of the mirrorplate 204. This reflective surface may be the same material from whichthe micro mirror 202 is fabricated, in which case the surface of themirror plate 204 is polished to a smoothness that provides the desiredlevel of reflectivity. Alternatively, after fabrication of themicro-mirrors 202, a layer of reflective material, such as aluminum maybe added to the surface of the mirror plate 204. Since in a preferredembodiment a large proportion of the surface area of the micro mirrorarray 103 is made up of the areas of the mirror plates 204 of the micromirrors, and the mirror plates 204 have reflective surfaces, a largeproportion of the surface area of the micro mirror array 103 isreflective and capable of reflecting light at a selected angle. Thus,the SLM 100 has a large fill ratio, and efficiently reflects incidentlight.

The mirror plate 204 is connected to a torsion spring hinge 206 by aconnector 216. The torsion spring hinge 206 is connected to a spacersupport frame 210, which holds the torsion spring 206 in place. Notethat other springs and connection schemes between the mirror plate 204,the hinge 206, and spacer support frame 210 could also be used. Thetorsion spring hinge 206 allows the mirror plate 204 to rotate relativeto the spacer support frame 210 about an axis between the walls of thespacer support frame 210 when a force such as an electrostatic force isapplied to the mirror plate 204 by applying a voltage between the mirror202 and the corresponding electrode 126. This rotation produces theangular deflection for reflecting light in a selected direction. In oneembodiment, this rotation occurs about an axis that is substantiallycollinear with the long axis of the hinge. In one preferred embodiment,the torsion spring hinge 206 has a “vertical” alignment. That is, thehinge 206 has a width 222 that is smaller than the depth of the hinge(perpendicular to the mirror plate 204 surface). The width of the hingeis typically between 0.1 microns to 0.5 microns, and is approximately0.2 microns in one embodiment. This “vertical” alignment of the hingefunctions to help minimize non-reflective surfaces on the surface of themirror array 103, and keep the fill ratio high. Also in one preferredembodiment, the

The spacer support frame 210 separates the mirror plate 204 from theelectrodes and addressing circuitry so that the mirror plate 204 maydeflect downward without contacting the electrodes and other circuitrybelow. The spacer support frame 210 includes spacer walls in oneembodiment, which are typically not separate components from the rest ofthe spacer support frame 210. These walls help define the height of thespacer support frame 210. The height of the spacers 210 is chosen basedon the desired separation between the mirror plates 204 and theelectrodes 126, and the topographic design of the electrodes. A largerheight allows more deflection of the mirror plate 204, and a highermaximum deflection angle. A larger deflection angle provides a bettercontrast ratio. In one embodiment, the maximum deflection angle of themirror plate 204 is 20 degrees. The spacer support frame 210 alsoprovides support for the hinge 206 and spaces the mirror plate 204 fromother mirror plates 204 in the mirror array 103. The spacer supportframe 210 has a spacer wall width 212, which when added to a gap betweenthe mirror plate 204 and the support frame 210, is substantially equalto the distance between adjacent mirror plates 204 of adjacent micromirrors 202. In one embodiment, the spacer wall width 212 is 1 micron orless. In one preferred embodiment, the spacer wall width 212 is 0.5microns or less. This places the mirror plates 204 closely together toincrease the fill ratio of the mirror array 103.

In some embodiments, the micro mirror 202 includes elements that stopthe deflection of the mirror plate 204 when the plate 204 has deflecteddownward to a predetermined angle. Typically, these elements include amotion stop and a landing tip. When the mirror surface 204 deflects, themotion stop on the mirror plate 204 contacts the landing tip. When thisoccurs, the mirror plate 204 can deflect no further. There are severalpossible configurations for the motion stop and landing tip. In oneembodiment, a landing tip is fabricated on the spacer frames 210opposite to the hinge side. The maximum tilt angle of mirror plate 204will be limited by the landing tip on the spacer frames 210 which stopsthe downward mechanical motion of the mirror plate 204. Having a fixedmaximum tilt angle simplifies controlling the spatial light modulator100 to reflect incident light in a known direction.

In another embodiment, landing tips are fabricated along with theelectrodes 126 on the second substrate 107. The landing tips of thisembodiment may be fabricated from an insulator, such as silicon dioxide,to prevent a short circuit between the mirror plate 204 and theelectrode 126. The maximum tilt angle of the mirror plate 204 is limitedin this embodiment by the angle at which the mirror plate 204 contactsthe landing tip on the second substrate 107. The height of the spacers210 affects this angle; higher spacers 210 allow larger angles thanlower ones. The landing tip on the second substrate 107 can be aprotruding bump, which reduces the total surface area actually incontact. The bumps can be held at the same electrical potential as themirror plate 204 to avoid welding on contact.

In yet another embodiment, the gap between the mirror plate 204 and thehinge 206 is accurately fabricated so when the mirror plate 204 tilts toa predetermined angle, the corners of the plate 204 near the hinge 206will contact the ends of the hinge 206, which act as mechanical stops.This occurs because the section of the hinge 206 connected to the mirrorplate 204 deflects along with the mirror plate 204, but the sections ofthe hinge 206 near the support wall 210 remain relatively undeflected.For example, with a height of the torsion hinge 206 being 1 micron, agap of 0.13 microns between the support wall and the hinge 206 willresult in a maximum tilting angle of the mirror plate 204 of 15 degrees.

In one preferred embodiment, the motion stop and landing tip are bothmade out of the same material as the rest of the mirror 202, and areboth fabricated out of the first substrate 105. In embodiments where thematerial is single crystal silicon, the motion stop and landing tip aretherefore made out of a hard material that has a long functionallifetime, which allows the mirror may 103 to last a long time. Further,because single crystal silicon is a hard material, the motion stop andlanding tip can be fabricated with a small area where the motion stopcontacts the landing tip, which greatly reduces sticking forces andallows the mirror plate 204 to deflect freely. Also, this means that themotion stop and landing tip remain at the same electrical potential,which prevents sticking that would occur via welding and chargeinjection processes were the motion stop and landing tip at differentelectrical potentials.

FIG. 2 b is a perspective view illustrating underside of a single micromirror 202, including the support walls 210, the mirror plate 204, thehinge 206, and the connector 216.

FIG. 3 a is a perspective view showing the top and sides of a micromirror array 103 having nine micro mirrors 202-1 through 202-9. WhileFIG. 3 a shows the micro mirror array 103 with three rows and threecolumns, for a total of nine micro mirrors 202, micro mirror arrays 103of other sizes are also possible. Typically, each micro mirror 202corresponds to a pixel on a video display. Thus, larger arrays 103 withmore micro mirrors 202 provide a video display with more pixels. Sincehinges 206 in the mirror array 103 all face in parallel along onedirection, light sources are directed at the mirrors 202 in the array103 along a single direction to be reflected to form a projected imageon the video display.

As shown in FIG. 3 a, the surface of the micro mirror may 103 has alarge fill ratio. That is, most of the surface of the micro mirror array103 is made up of the reflective surfaces of the mirror plates 204 ofthe micro mirrors 202. Very little of the surface of the micro mirrorarray 103 is nonreflective. As illustrated in FIG. 3 a, thenonreflective portions of the micro mirror array 103 surface are theareas between the reflective surfaces of the micro mirrors 202. Forexample, the width of the area between mirror 202-1 and 202-2 isdetermined by the spacer wall width 212 and the sum of the width of thegaps between the mirror plates 204 of mirrors 202-1 and 202-2 and thesupport wall 210. The gaps and the spacer wall width 212 can be made assmall as the feature size supported by the fabrication technique. Thus,in one embodiment, the gaps are 0.2 micron, and in another embodimentthe gaps are 0.13 micron. As semiconductor fabrication techniques allowsmaller features, the size of the spacer will 210 and the gaps candecrease to allow higher fill ratios. FIG. 3 b is a perspective viewdetailing one mirror 202 of the mirror array 103 of FIG. 3 a.Embodiments of the present invention allow fill ratios of 85%, 90%, oreven higher.

FIG. 4 a is a perspective view showing the bottom and sides of the micromirror array 103 shown in FIG. 3. As shown in FIG. 4 a, the spacersupport frames 210 of the micro mirrors 202 define cavities beneath themirror plates 204. These cavities provide room for the mirror plates 204to deflect downwards, and also allow large areas beneath the mirrorplates 204 for placement of the second layer 104 with the electrodes126, and/or the third layer with the control circuitry 106. FIG. 4 b isa perspective view detailing one mirror 202 of the mirror array 103 ofFIG. 4 a.

FIG. 5 a is a top view of the micro mirror array 103 having nine micromirrors 202-1 through 202-9 shown in FIGS. 3 a and 4 a. For example, formicro mirror 202-1, FIG. 5 a illustrates the mirror plate 204, thespacer support frame 210, the torsion spring 206, and the connector 216connecting the mirror plate 204 to the torsion spring 206. FIG. 5 a alsoclearly illustrates, as described above with respect to FIG. 3 a, thatthe micro mirror array 103 has a large fill ratio. Most of the surfaceof the micro mirror array 103 is made up of the reflective surfaces ofthe micro mirrors 202-1 through 202-9. FIG. 5 a clearly illustrates howfill ratio is determined by the areas of the reflective mirror plates204 and the areas between the reflective surfaces of the mirror plates204. The size of the areas between the reflective surfaces of the mirrorplates 204 in one embodiment is limited by the feature size limit of thefabrication process. This determines how small the gaps between themirror plate 204 and the spacer wall 210 can be made, and how thick thespacer wall 210 is. Note that, while the single mirror 202 as shown inFIG. 2 has been described as having its own spacer support frame 210,there are not typically two separate abutting spacer walls 210 betweenmirrors such as mirrors 202-1 and 202-2. Rather, there is typically onephysical spacer wall of the support frame 21.0 between mirrors 202-1 and202-2. FIG. 5 b is a perspective view detailing one mirror 202 of themirror array 103 of FIG. 5 a.

FIG. 6 a is a bottom view of the micro mirror array 103 having ninemicro mirrors 202-1 through 202-9, as shown in FIGS. 3 through 5. FIG. 6a shows the bottom of the mirror plates 204, as well as the bottoms ofthe spacer support frames 210, the torsion springs 206, and theconnectors 216. The area beneath the mirror plates 204 is large enoughin many embodiments to allow the optimum design and placement ofelectrodes 126 and control circuitry 106, and space for accommodating apossible mirror landing tip. FIG. 6 b is a perspective view detailingone mirror 202 of the mirror array 103 of FIG. 6 a

As seen in FIGS. 5 a and 6 a, very little light that is normal to themirror plate 204 can pass beyond the micro mirror array 103 to reach anythe electrodes 126 or control circuitry 106 beneath the micro mirrorarray 103. This is because the spacer support frame 210, the torsionspring 206, the connector 216, and the mirror plate 204 provide nearcomplete coverage for the circuitry beneath the micro mirror array 103.Also, since the spacer support frame 210 separates the mirror plate 204from the circuitry beneath the micro mirror array 103, light travelingat a non perpendicular angle to the mirror plate 204 and passing beyondthe mirror plate 204 is likely to strike a wall of the spacer supportframe 210 and not reach the circuitry beneath the micro mirror may 103.Since little intense light incident on the mirror may 103 reaches thecircuitry, the SLM 100 avoids problems associated with intense lightstriking the circuitry. These problems include the incident lightheating up the circuitry, and the incident light photons chargingcircuitry elements, both of which can cause the circuitry tomalfunction.

In FIGS. 3-6 each micro mirror 202 in the micro mirror array 103 has itstorsion spring 206 on the same side. In one alternate embodiment,different micro mirrors 202 in the micro mirror array 103 have torsionsprings 206 on different sides. For example, returning to FIG. 3 a,mirrors 202-1 and 202-3 would have springs 206 on the same side asillustrated. Mirror 202-2, in contrast, would have a spring 206 ondifferent side so that the spring 206 of mirror 202-2 is perpendicularto the springs 206 of mirrors 202-1 and 202-3. This allows the mirrorplates 204 of the different micro mirrors 202-1 and 202-2 to deflect indifferent directions, which gives the mirror array 103 as a whole morethan one controllable degree of freedom. In this alternate embodiment,two different light sources (for example, light sources with differentlycolored light) can be directed toward the micro mirror array 103 andseparately selectively redirected by the micro mirrors 202 in the micromirror may 103 form an image on a video display. In such an embodiment;multiple micro mirrors 202 can be used to reflect light from themultiple light sources to the same pixel in the video display. Forexample, two different color light sources can be directed toward themirror array 103 along different directions, and reflected by the array103 to form a multicolor image on a video display. The micro mirrors202-1 and 202-3 with torsion springs 206 on a first side control thereflection of a first light source to the video display. The micromirrors such as micro mirror 202-2 with torsion springs 206 on adifferent second side control the reflection of a second light source tothe video display.

FIG. 7 a is a perspective view of a micro mirror 702 according to analternate embodiment of the invention. The torsion hinge 206 in thisembodiment is diagonally oriented with respect to the spacer supportwall 210, and divides the mirror plate 204 into two parts, or sides: afirst side 704 and a second side 706. Two electrodes 126 are associatedwith the mirror 702, one electrode 126 for a first side 704 and oneelectrode 126 for a second side 706. This allows either side 704, 706 tobe attracted to one of the electrodes 126 beneath and pivot downward,and provides more total range of angular motion for the same supportwall 210 height as compared to the mirror illustrated in FIGS. 2-6. FIG.7 b is a more detailed view of the mirror 702 and illustrates the mirrorplate 204, hinge 206, and support wall 210. FIGS. 7 c and 7 d illustratethe underside of a single mirror 702 and a more detailed view of theinterior corner of the mirror 702. In other embodiments, the hinge 206may be substantially parallel to one of the sides of the mirror plate204, rather than diagonal, and still be positioned to divide the mirrorplate 204 into two parts 704, 706.

FIGS. 8 a through 8 d are various perspective views of mirror arrayscomposed of multiple micro mirrors 702 as described in FIGS. 7 a through7 d. FIGS. 8 a and 8 b illustrate the top of a mirror 702 array and amore detailed view of one mirror 702 in the array. FIGS. 8 c and 8 dillustrate the underside of a mirror 702 array and a more detailed viewof one mirror 702 in the array.

Particular embodiments in accordance with the present invention relateto micro-mirror array architectures exhibiting high contrast ratios.These embodiments are described below in the section entitled “HighContrast Ratio Array Architectures”.

Fabrication of the Spatial Light Modulator:

FIG. 9 a is a flowchart illustrating one preferred embodiment of how thespatial light modulator 100 is fabricated. FIGS. 9 b through 9 g areblock diagrams illustrating the fabrication of the spatial lightmodulator 100 in more detail. In summary, the micro mirrors 202 arepartially fabricated on the first substrate 105. Separately, some or allof the electrodes, addressing circuitry, and control circuitry arefabricated on the second substrate 107. The first and second substrates105 and 107 are then bonded together. The first substrate 105 isthinned, then lithography and etch steps follow. Then the fabrication ofthe micro mirrors 202 is completed. Final steps, including packaging,complete the spatial light modulator 100. In one embodiment, the mirrormay 103 is fabricated from a wafer of single crystal silicon using onlyanisotropic dry etch methods, only two etches are done to fabricate themirror may 103, and the circuitry is fabricated using standard CMOStechniques. This provides an easy and inexpensive way to fabricate theSLM 100.

Conventional spatial light modulators are fabricated with surface micromachining techniques that include etching, deposition of structurallayers, deposition and removal of sacrificial layers. These conventionalMEMS fabrication techniques result in poor yield, poor uniformity, andresult feature sizes of approximately 1 micron or larger. In contrast,one embodiment of the present invention uses semiconductor fabricationtechniques, which do not include sacrificial layers, have much higheryields, and allow creation of features of 0.13 microns or smaller.

Referring to FIG. 9 a, a first mask is generated 902 to initiallypartially fabricate the micro mirrors 202. This mask defines what willbe etched from one side of the first substrate 105 to form the cavitieson the underside of the micro mirror array 103 that define the spacersupport frames 210 and support posts 208. Standard techniques, such asphotolithography, can be used to generate the mask on the firstsubstrate. As mentioned previously, in one preferred embodiment themicro mirrors 202 are formed from a single material, such as singlecrystal silicon. Thus, in one preferred embodiment, the first substrate105 is a wafer of single crystal silicon. Note that typically multiplemicro mirror arrays 103, to be used in multiple SLMs 100, are fabricatedon a single wafer, to be separated later. The structures fabricated tocreate the micro mirror array 103 are typically larger than the featuresused in CMOS circuitry, so it is relatively easy to form the micromirror array 103 structures using known techniques for fabricating CMOScircuitry. FIG. 9 b is a side view that illustrates the first substrate105 prior to fabrication. The substrate 105 initially includes a devicelayer 938, which is the material from which the mirror array 103 will befabricated, an insulating oxide layer 936, and a handling substrate 934.FIG. 9 c is a side view that illustrates the first substrate 105 withthe mask upon it.

After the mask is generated 902, in a preferred embodiment, the firstsubstrate 105 is anisotropically ion etched 904 to form the cavitiesbeneath the mirror plates 204. Put in another way, a “well” is formed inthe first substrate for every micro mirror 202. Other methods besides ananisotropic ion etch may also be used to form the cavities or “wells,”such as a wet etch or a plasma etch. FIG. 9 d is a block diagram thatshows the first substrate 105 with the cavities etched.

Separately from the fabrication of the cavities beneath the mirrorplates 204, the electrodes 126 and control circuitry 106 are fabricated906 on the second substrate 107. The second substrate 107 may be atransparent material, such as quartz, or another material. If the secondsubstrate is quartz, transistors may be made from polysilicon, ascompared to crystalline silicon. The circuitry can be fabricated 906using standard CMOS fabrication technology. For example, in oneembodiment, the control circuitry 106 fabricated 906 on the secondsubstrate 107 includes an array of memory cells, row address circuitry,and column data loading circuitry. There are many different methods tomake electrical circuitry that performs the addressing function. TheDRAM, SRAM, and latch devices commonly known may all perform theaddressing function. Since the mirror plate 204 area may be relativelylarge on semiconductor scales (for example, the mirror plate 204 mayhave an area of 225 square microns), complex circuitry can bemanufactured beneath micro mirror 202. Possible circuitry includes, butis not limited to, storage buffers to store time sequential pixelinformation, circuitry to compensate for possible non-uniformity ofmirror plate 204 to electrode 126 separation distances by driving theelectrodes 126 at varying voltage levels, and circuitry to perform pulsewidth modulation conversions.

This control circuitry 106 is covered with a passivation layer such assilicon oxide or silicon nitride. Next, a metallization layer isdeposited. This metallization layer is patterned and etched to defineelectrodes 126, as well as a bias/reset bus in one embodiment. Theelectrodes 126 are placed during fabrication so that one or more of theelectrodes 126 corresponds to each micro mirror 202. As with the firstsubstrate 105, typically multiple sets of circuitry to be used inmultiple SLMs 100 are fabricated 906 on the second substrate 107 to beseparated later.

Next, the first and second substrates are bonded 910 together. The sideof the first substrate 105 that has the cavities is bonded to the sideof the second substrate 107 that has the electrodes. The substrates 105and 107 are aligned so that the electrodes on the second substrate 107are in the proper position to control the deflection of the micromirrors 202 in the micro mirror array 103. In one embodiment, the twosubstrates 105 and 107 are optically aligned using double focusingmicroscopes by aligning a pattern on the first substrate 105 with apattern on the second substrate 107, and the two substrates 105 and 107are bonded together by low temperature bonding methods such as anodic oreutectic bonding. There are many possible alternate embodiments to thefabrication 906. For example, thermoplastics or dielectric spin glassbonding materials can be used, so that the substrates 105 and 107 arebonded thermal-mechanically. FIG. 9 e is a side view that shows thefirst and second substrates 105, 107 bonded together.

After bonding the first and second substrates 105 and 107 together, thesurface of the first substrate 105 that has not been etched is thinned912 to a desired thickness. First, the handling substrate 934 isremoved, as shown in FIG. 9 f, typically by grinding or etching. Thenthe oxide 936 is removed. Then, the device layer 938 is thinned orpolished, if necessary. This thinning is done in one embodiment bymechanical grinding the substrate 105 to & thickness between the bottomof the fabricated “well” and the opposing surface of the first substrate105 that is near the desired thickness of the micro mirror 202. In oneembodiment, this thickness achieved by mechanical grinding isapproximately 5 microns. The substrate 105 is then polished bymechanical fine polishing or chemical mechanical polishing to thicknessdesired between the bottom of the “well” and the opposing surface of thefirst substrate 105. This thickness defines the thickness of the mirrorplates 204. In one embodiment, this desired thickness is less thanapproximately 1 micron or less. FIG. 9 g is a side view showing thebonded first and second substrates 105, 107 after the first substrate105 has been thinned.

Next, the reflective surface of the micro mirror 202 is created. Thiscan be done through polishing 913 the first substrate 105 so that thesurface of the first substrate 105 is reflective. It is also possible todeposit 914 a layer of a reflective material on the first substrate 105to create a reflective surface. Other methods to create a reflectivesurface may also be used.

In one embodiment, a reflective layer of aluminum is deposited 914. Thethinned surface of the first substrate 105 is coated with approximately10 nm of titanium seed thin film. Then an approximately 30 nm thicklayer of aluminum is deposited to form a reflective layer with areflectivity above 95% over much of the visible optical spectrum. FIG. 9h is a side view that shows a deposited reflective layer 932.

The reflective surface of the first substrate 105 is then masked and, ina preferred embodiment, high-aspect-ratio anisotropically ion etched 916to finish forming the micro mirror array 103 and release the mirrorplates 204. This second etch defines the mirror plate 204, the torsionspring hinge 206, and the connector 216. Thus, it only takes twoetchings of the first substrate 105 to fabricate the micro mirrors 202.This significantly decreases the cost of fabricating the micro mirrors202. FIG. 9 i is a block diagram showing the surface of the firstsubstrate 105 covered with the mask 933, and FIG. 9 j is a block diagramshowing the spatial light modulator 100 after the second etching,including the mirror plate 204, the hinge 206, the spacer support frame210, and the electrode 126.

In some embodiments, the hinges 206 are partially etched to be recessedfrom the surface of the mirror plates 204. Also, in some embodiments areflective surface is deposited 914 after the second etch that definesthe mirror plate 204, the torsion spring hinge 206, and the connector216. Such a reflective layer may be deposited by, for example,evaporating aluminum downwardly at an angle such that the horizontalvector of the angle is from mirror plate 204 to hinges 206. With thisangle, and if the hinges 206 were etched so that they are recessed fromthe surface of the mirror plates 204, it is possible to depositsubstantially no reflective coating on the surfaces of recessed hinges206 to minimize the optical scattering of incident light by the surfacesof the torsion hinges 206. The evaporation may occur, for example, inthe reaction chamber of an e-gun thermal evaporator at a deposition rateof one nanometer per second.

In some embodiments, the micro-mirror array 103 is protected by acapping layer, which may comprise a piece of glass or other transparentmaterial. In one embodiment, during fabrication of the micro mirrorarray 103, a rim is left around the perimeter of each micro mirror array103 fabricated on the first substrate 105. To protect the micro mirrors202 in the micro mirror array 103, a piece of glass or other transparentmaterial is bonded 918 to the rim. This transparent material protectsthe micro mirrors 202 from physical harm. In one alternative embodiment,lithography is used to produce an array of rims in a layer ofphotosensitive resin on a glass plate. Then epoxy is applied to theupper edge of the rims, and the glass plate is aligned and attached tothe completed reflective SLM 100.

As discussed above, multiple spatial light modulators 100 may befabricated from the two substrates 105 and 107; multiple micro mirrorarrays 103 may be fabricated in the first-substrate 105 and multiplesets of circuitry may be fabricated in the second substrate 107.Fabricating multiple SLMs 100 increases the efficiency of the spatiallight modulator 100 fabrication process. However, if multiple SLMs 100are fabricated at once, they must be separated into the individual SLMs100. There are many ways to separate each spatial light modulator 100and ready it for use. In a first method, each spatial light modulator100 is simply die separated 920 from the rest of the SLMs 100 on thecombined substrates 105 and 107. Each separated spatial light modulator100 is then packaged 922 using standard packaging techniques.

In a second method, a wafer-level-chip-scale packaging is carried out toencapsulate each SLM 100 into separate cavities and form electricalleads before the SLMs 100 are separated. This further protects thereflective deflectable elements and reduces the packaging cost. In oneembodiment of this method, the backside of the second substrate 107 isbonded 924 with solder bumps. Backside of the second substrate 107 isthen etched 926 to expose metal connectors that were formed duringfabrication of the circuitry on the second substrate 107. Next,conductive lines are deposited 928 between the metal connectors and thesolder bumps to electrically connect the two. Finally, the multiple SLMsare die separated 930.

FIG. 10 illustrates the generation 902 of the mask 1000 and the etching904 that forms the cavities in the first substrate in more detail. In apreferred embodiment, the first substrate is a wafer of single crystalsilicon. Oxide is deposited and patterned on the first substrate. Thisresults in the pattern shown in FIG. 10, where area 1004 is oxide thatwill prevent the substrate beneath from being etched, and areas 1002 areareas of exposed substrate. The areas of exposed substrate 1002 will beetched to form the cavities. The areas 1004 that are not etched remain,and form the spacer support posts 208 and the spacer support frame 210.

In one embodiment, the substrate is etched in a reactive ion etchchamber flowing with SF₆, HBr, and oxygen gases at flow rates of 100sccm, 50 sccm, and 10 sccm respectively. The operating pressure is inthe range of 10 to 50 mTorr, the bias power is 60 W, and the sourcepower is 300 W. In another embodiment, the substrate is etched in areactive ion etch chamber flowing with Cl₂, HBr, and oxygen gases atflow rates of 100 sccm, 50 sccm, and 10 sccm respectively. In theseembodiments, the etch processes stop when the cavities are about 3-4microns deep. This depth is measured using in-situ etch depthmonitoring, such as in-situ optical interferometer techniques, or bytiming the etch rate.

In another embodiment, the cavities are formed in the wafer by ananisotropic reactive ion etch process. The wafer is placed in a reactionchamber. SF₆, HBr, and oxygen gases are introduced into the reactionchamber at a total flow rate of 100 sccm, 50 seem, and seemrespectively. A bias power setting of 50 W and a source power of 150 Ware used at a pressure Of 50 mTorr for approximately 5 minutes. Thewafers are then cooled with a backside helium gas flow of 20 sccm at apressure of 1 mTorr. In one preferred embodiment, the etch processesstop when the cavities are about 3-4 microns deep. This depth ismeasured using in-situ etch depth monitoring, such as in-situ opticalinterferometer techniques, or by timing the etch rate.

FIG. 11 is a perspective view of one embodiment of the electrodes 126formed on the second substrate 107. In this embodiment, each micromirror 202 has a corresponding electrode 126. The electrodes 126 in thisillustrated embodiment are fabricated to be higher than the rest of thecircuitry on the second substrate 107. As shown in FIG. 11, material onthe sides of the electrodes 126 slopes down from the electrodes topsurface in a somewhat pyramid shape. In other embodiments, theelectrodes 126 are located on the same level as the rest of thecircuitry on the second substrate 107, rather than extending above thecircuitry. In one embodiment of the invention, the electrodes 126 areindividual aluminum pads of approximately 10×10 microns in size. Theseelectrodes 126 are fabricated on the surface of the second substrate107. The large surface area of the electrodes 126 in this embodimentresults in relatively low addressing voltages required to pull mirrorplate 204 down onto the mechanical stops, to cause the fullpre-determined angular deflection of the mirror plates 204.

FIG. 12 is a perspective view showing the micro mirror array 103 on thefirst substrate 105 positioned over the electrodes 126 and othercircuitry on the second substrate 107. This illustrates the relativepositions of the micro mirrors 202 in the micro mirror array 103 and theelectrodes prior to bonding 910 the first and second substrates 105 and107 together. Note that, for illustrative purposes, the micro mirrors202 in the micro mirror array 103 are shown as completed micro mirrors202. However, in a preferred embodiment, as described with respect toFIG. 9 a, only the cavities beneath the mirror plates 204 in the firstsubstrate 105 would have been etched prior to bonding the firstsubstrate 105 to the second substrate 107. The mirror plate 204, hinges206, and connectors 216 would not be fabricated yet. In embodimentswhere the electrodes 126 are located above the level of the rest of thecircuitry and material on the side of the electrodes 126 slopes down,the sloping material helps correctly position the first substrate 105 onthe second substrate 107.

FIG. 13 illustrates, a simplified embodiment of a mask that is used inetching 96 the upper surface of the first substrate 105. In the etching916 step, areas 1302 are left exposed and are etched to release themirror plates 204 and form the torsion springs 206, the connectors 216,and the support posts 208. Other areas 1304 are covered with photoresistmaterial and are not etched. These areas include the mirror plates 204themselves and the material that will form the hinges 206. As shown inFIG. 13, most of the surface of the mirror array 103 is reflective. Thefabrication process only creates small nonreflective gaps that separatethe mirror plates 204 from the support walls 210 and hinges 206.

The upper surface of the first substrate 105 is etched to release themirror plates 204 and form the hinges 206 after the upper surface of thefirst substrate 105 is masked. In one embodiment, it is etched in areactive ion etch chamber flowing with SF₆, HBr, and oxygen gases at aflow rate of 100 sccm, 50 sccm, and 10 sccm respectively. The operatingpressure is in the range of 10 to 50 mTorr, and the bias power of 60 Wand a source power 300 W. Since the etch depth is typically less than 1micron, there are several other fabrication processes can achieve thesame goal. Another embodiment uses Cl₂ and oxygen gases at an operatingpressure of 10 mTorr to 50 mTorr with bias and source power settings ofthe etching reaction chamber of 50 W and 300 W, respectively, to achievetight dimension control. The etch process is stopped at the desireddepth (in one embodiment about 5 microns deep) using in-situ etch depthmonitoring or by timing the etch rate.

Operation:

In operation, individual reflective elements are selectively deflectedand serve to spatially modulate light that is incident to and reflectedby the mirrors.

FIG. 14 is a cross-section that shows the micro mirror 202 above anelectrode 126. In operation, a voltage is applied to an electrode 126 tocontrol the deflection of the corresponding mirror plate 204 above theelectrode 126. As shown in FIG. 14, when a voltage is applied to theelectrode 126, the mirror plate 204 is attracted to the electrode. Thiscauses the mirror plate 204 to rotate about the torsion spring 206. Whenthe voltage is removed from the electrode 126, the hinge 206 causes themirror plate 204 to spring back upward. Thus, lit striking the mirrorplate 204 is reflected in a direction that can be controlled by theapplication of voltage to the electrode.

One embodiment is operated as follows. Initially the mirror plate isundeflected. In this unbiased state, an incoming light beam, from alight source, obliquely incident to SLM 100 is reflected by the flatmirror plates 204. The outgoing, reflected light beam may be receivedby, for example, an optical dump. The light reflected from theundeflected mirror plate 204 is not reflected to a video display.

When a voltage bias applied between the mirror plate 204 and the bottomelectrode 126, the mirror plate 204 is deflected due to electrostaticattraction. Because of the design of the hinge 206, the free end of themirror plate 204 is deflected towards the second substrate 107. Notethat in one preferred embodiment substantially all the bending occurs inthe hinge 206 rather than the mirror plate 204. This may be accomplishedin one embodiment by making the hinge width 222 thin, and connecting thehinge 206 to the support posts 208 only on both ends. The deflection ofthe mirror plate 204 is limited by motion stops, as described above. Thefull deflection of the mirror plate 204 deflects the outgoing reflectedlight beam into the imaging optics and to the video display.

When the mirror plate 204 deflects past the “snapping” or “pulling”voltage (approximately 12 volts in one embodiment), the restoringmechanical force or torque of the hinge 206 can no longer balance theelectrostatic force or torque and the mirror plate 204 “snaps” downtoward the electrode 126 to achieve full deflection, limited only by themotion stops. To release the mirror plate 204 from its fully deflectedposition, the voltage must be lowered-substantially below the snappingvoltage to a releasing voltage (e.g., approximately 3.3 volts, in theembodiment where the snapping voltage is 5.0 volts). Thus, the micromirror 202 is an electromechanically bistable device. Given a specificvoltage between the releasing voltage and the snapping voltage, thereare two possible deflection angles at which the mirror plate 204 may be,depending on the history of mirror plate 204 deflection. Therefore, themirror plate 204 deflection acts as a latch. These bistability andlatching properties exist since the mechanical force required fordeflection of the mirror plate 204 is roughly linear with respect todeflection angle, whereas the opposing electrostatic force is inverselyproportional to the distance between the mirror plate 204 and theelectrode 126.

Since the electrostatic force between the mirror plate 204 and theelectrode 126 depends on the total voltage between the mirror plate 204and the electrode 126, a negative voltage applied to a mirror plate 204reduces the positive voltage needed to be applied to the electrode 126to achieve a given deflection amount. Thus, applying a voltage to amirror array 103 can reduce the voltage magnitude requirement of theelectrodes 126. This can be useful, for example, because in someapplications it is desirable to keep the maximum voltage that must beapplied to the electrodes 126 below 12V because a 5V switchingcapability is more common in the semiconductor industry. In addition;the amount of charge needed to bias each electrode 126 where a voltageis applied to a mirror array 103 is smaller than the charge needed in anembodiment in which the mirror array 103 is held at a ground potential.Thus the time required to correctly apply the proper voltage to theelectrode 126 and deflect the mirror plate 204 is relatively fast.

Since the maximum deflection of the mirror plate 204 is fixed, the SLM100 can be operated in a digital manner if it is operated at voltagespast the snapping voltage. The operation is essentially digital becausethe mirror plate 204 is either fully deflected downward by applicationof a voltage to the associated electrode 126 or is allowed to springupward, with no voltage applied to the associated electrode 126. Avoltage that causes the mirror plate 204 to fully deflect downward untilstopped by the physical elements that stop the deflection of the mirrorplate 204 is known as a “snapping” or “pulling” voltage. Thus, todeflect the mirror plate 204 fully downward, a voltage equal or greaterto the snapping voltage is applied to the corresponding electrode 126.In video display applications, when the mirror plate 204 is fullydeflected downward, incident light on that mirror plate 204 is reflectedto a corresponding pixel on a video display. When the mirror plate 204is allowed to spring upward, the light is reflected in a direction thatdoes not strike the video display.

During such digital operation, it is not necessary to keep the fullsnapping voltage on an electrode 126 after an associated mirror plate204 has been fully deflected. During an “addressing stage,” voltages forselected electrodes 126 that correspond to the mirror plates 204 whichshould be fully deflected are set to levels required to deflect themirror plates 204. After the mirror plates 204 in question havedeflected due to the voltages on electrodes 126, the voltage required tohold the mirror plates 204 in the deflected position is less than thatrequired for the actual deflection. This is because the gap between thedeflected mirror plate 204 and the addressing electrode 126 is smallerthan when the mirror plate 204 is in the process of being deflected.Therefore, in the “hold stage” after the addressing stage the voltageapplied to the selected electrodes 126 can be reduced from its originalrequired level without substantially affecting the state of deflectionof the mirror plates 204. One advantage of having a lower hold stagevoltage is that nearby undeflected mirror plates 204 are subject to asmaller electrostatic attractive force, and they therefore remain closerto a zero-deflected position. This improves the optical contrast ratiobetween the deflected mirror plates 204 and the undeflected mirrorplates 204.

With the appropriate choice of dimensions (in one embodiment, spacer 210separation between the mirror plate 204 and the electrode 126 of 1 to 5microns and hinge 206 thickness of 0.05 to 0.45 microns) and materials(such as single crystal silicon (100)), a reflective SLM 100 can be madeto have an operating voltage of only a few volts. The torsion modulus ofthe hinge 206 made of single crystal silicon may be, for example, 5×10Newton per meter-squared per radium. The voltage at which the electrode126 operates to fully deflect the associated mirror plate 204 can bemade even lower by maintaining the mirror plate 204 at an appropriatevoltage (a “negative bias”), rather than ground. This results in alarger deflection angle for a given voltage applied to an electrode 126.The maximum negative bias voltage is the releasing voltage, so when theaddressing voltage reduced to zero the mirror plate 204 can snap back tothe undeflected position.

It is also possible to control the mirror plate 204 deflections in amore “analog” manner. Voltages less than the “snapping voltage” areapplied to deflect the mirror plate 204 and control the direction inwhich the incident light is reflected.

Alternate Applications:

Aside from video displays, the spatial light modulator 100 is alsouseful in other applications. One such application is in masklessphotolithography, where the spatial light modulator 100 directs light todevelop deposited photoresist. This removes the need for a mask tocorrectly develop the photoresist in the desired pattern.

Although the invention has been particularly shown and described withreference to multiple embodiments, it will be understood by personsskilled in the relevant art that various changes in form and details canbe made therein without departing from the spirit and scope of theinvention. For example, the mirror plates 204 may be deflected throughmethods other than electrostatic attraction as well. The mirror plates204 may be deflected using magnetic, thermal, or piezo-electricactuation instead.

High Contrast Ratio Array Architectures

One important measure of performance of a spatial light modulator deviceis the contrast in intensity between reflected light in pixel regions,and the intensity of the background. The greater this contrast, thebetter the performance of the device.

According to embodiments of the present invention, the contrast ratioexhibited by a reflective spatial light modulator may be enhanced,utilizing a number of techniques. In accordance with certainembodiments, the device may be fabricated such that pixel array elementsother than the moveable reflecting surfaces, such as hinges and/orsupporting posts, are hidden from incident light.

The contrast offered by a spatial light modulator device may be enhancedby positioning nonreflective elements such as supporting posts andmoveable hinges, behind the reflecting surface of the pixel. Inaccordance with one embodiment, the reflecting surface is suspended overand underlying hinge-containing layer by ribs of the reflecting materialdefined by gaps in a sacrificial layer. In accordance with analternative embodiment, the reflecting surface is separated from theunderlying hinge by a gap formed in an intervening layer, such as oxide.In either embodiment, walls separating adjacent pixel regions may berecessed beneath the reflecting surface to further reduce unwantedscattering of incident light and thereby enhance contrast.

FIG. 15A shows a simplified plan view of one embodiment of an opticaldevice fabricated in accordance with the present invention. FIG. 15Bshows a cross-sectional view of the device of FIG. 15A, taken along lineB-B′. FIG. 15C shows a cross-sectional view of the device of FIG. 15Ataken along line C-C′.

Optical device 1500 comprises continuous reflecting surface 1502supported over underlying CMOS substrate 1504 by posts 1506 located atcorners 1502 a. Hinge structure 1508 allows reflecting surface 1502 totilt relative to portions 1510 fixed in place on top of posts 1506.

FIGS. 15B and 15C show that reflecting surface 1502 is the upper mostlayer in a stack 1503 of material. Specifically, aluminum layer 1512having a thickness of about 1000-5000 Å is suspended over an underlyingstack 1503 comprising conducting (Ti/Al) layer combination 1514 andsilicon 1516, by projecting aluminum ribs 1512 a integral with theoverlying reflective surface. Formation of these integral ribs isdescribed in detail below in connection with FIGS. 15F-N.

FIG. 15D shows a plan view of the CMOS substrate 1504, without theoverlying reflecting surface present. FIG. 15E is a cross-sectional viewof the substrate of FIG. 15D, taken along line E-E′. These Figures showindividual pixel regions 1501 separated by raised intersecting oxidewalls 1503. As shown in FIG. 15B, oxide walls 1503 are recessed relativeto the height of the adjacent reflective surface. This configurationreduces unwanted reflection and scattering by the exposed top of theoxide walls, which could result in a reduction of contract offered bythe device. Fabrication of the recessed oxide walls is discussed indetail below in connection with FIG. 15M.

Each pixel region 1501 comprises an electrode pair 1520 a and 1520 bseparated by a dielectric material 1522. Alternative application ofvoltages to electrodes 1520 a and 1520 b results in an electrostaticattraction between the electrode and the corresponding mirror structure.This attractive force shifts the position of the reflecting surfacerelative to incident light, resulting in the pixel being eitherreflecting (bright) or non-reflecting (dark). FIGS. 15D-E also showlanding pads 1524 that are configured to maintain a constant potentialof the attracted corner of the tilted reflecting surface resting uponit.

The device shown in FIGS. 15A-E offers certain features enhancing itsperformance. One such feature already discussed, is the recessed natureof the oxide walls separating adjacent pixel regions. As the tops ofthese walls are below from the plane of the reflecting surface,scattering of incident light from the tops of these walls is reduced,and contrast of the device remains high.

Another feature enhancing performance of the optical device of FIGS.15A-E is the creation of a reflecting surface over the supporting poststructures and flexible hinge structure. The presence of this reflectingsurface overlying these non-reflecting functional and flexible hingestructure pixel elements also tends to reduce the amount unwanted lightscattering from edge structures and non-aligned structures, therebydesirably enhancing contrast ratio.

Fabrication of the optical device of FIGS. 15A-E is now discussed inconnection with the cross-sectional views of FIGS. 15F-N, which aretaken along the line B-B′ of FIG. 15A.

FIG. 15F shows an initial fabrication step, wherein a CMOS substrate1504 comprising pixel regions 1501 having electrodes 1520 a-b separatedby dielectric material 1522, is provided. Adjacent pixel regions 1501are separated by raised oxide walls 1503 a having an initial height.Also extending upward from the CMOS substrate, but not shown in thecross-sectional views of FIGS. 15F-N, are the posts shown in FIGS.15A-B, exhibiting the same initial height as the raised oxide walls.FIG. 15F also shows a silicon-on-insulator (SOI) substrate 1530comprising oxide layer 1532 encased within silicon layers 1534 and 1536,that is placed into contact with the top of the oxide walls.

FIG. 15G shows the removal of silicon 1536 and oxide 1532 to revealsilicon 1534 on top of oxide walls 1503 a and posts (not shown). Siliconlayer 1534 forms the basis for the reflecting stack that is fabricatedas described as follows.

In FIG. 15H, conducting layer combination 1514 comprising Ti/Al isdeposited over the silicon layer 1534. The Al component of layercombination 1514 is conducting, and the Ti component of layercombination 1514 serves to promote adhesion between the Al and theunderlying silicon.

In FIG. 15I, a first photoresist mark 1538 is patterned over theconducting layer 1514, leaving exposed regions corresponding to openings1540 on either side of the hinge structure that is to be formed.

In FIG. 15J, exposed portions of the conducting layer 1514 and theunderlying silicon layer 1532 are removed by etching, to define hingestructure 1508 and the adjacent openings in the surrounding siliconlayer. The first photoresist layer is then stripped.

In FIG. 15K, a second photoresist mask 1542 is formed over the patternedadhesion layer. This second photoresist mask 1542 penetrates into andoccupies the gaps defining the hinge structure 1508. Second photoresistpattern 1542 also defines openings 1543 a and via holes 1543 b. As shownin FIG. 15L, via holes 1543 b are positioned to receive reflectivealuminum material 1512 that is deposited, and thereby form projectionsor ribs 1512 a suspending this reflecting aluminum surface over theunderlying silicon layer in which the moveable hinge is defined.

FIG. 15L also shows patterning of a third photoresist mask 1550 over thedeposited aluminum 1512. Gaps 1552 defined by the third photoresist mask1550 correspond to the borders of the pixel region and the location ofthe underlying raised oxide walls 1503 a.

In FIG. 15M, the deposited aluminum layer 1512 within openings 1543 a ofsecond photoresist mask 1542, conducting layer 1514, silicon 1532 a, andupper portion of the raised oxide walls 1503 a underlying gaps 1552 areetched, thereby defining the individual pixel reflecting surface 1502and causing the oxide walls 1503 to become recessed. Although not shownin the cross-sectional view of FIG. 15M, the posts are not etched duringthis process and remain at their full height to support the reflectingstack.

FIG. 15N shows completion of the process flow, wherein both the secondphotoresist mask and the third photoresist mask are removed, leaving acontinuous reflecting surface 1502 comprising aluminum layer 1512supported over the hinge-containing silicon layer by integralprojections/ribs 1512 a present in the former location of the via holes.In this manner, optical device 1500 comprises a continuous reflectingsurface supported over the posts 1506 and the moveable hinge portion,such that neither the post nor hinge elements are available to scatterincident light, reduce contrast, and degrade device performance.

The embodiment of the process flow and resulting SLM device shown inFIGS. 15A-N, represents only one example of a device fabricated inaccordance with the present invention. Other configurations arepossible.

For example, while the approach of FIGS. 15A-N utilizes a sacrificialphotoresist layer to position ribs suspending the reflecting surfaceover the underlying silicon, this is not required by the presentinvention.

FIGS. 16A-F illustrate a series of simplified cross-sectional viewsillustrating an alternative embodiment of a process flow and resultingstructure of an embodiment of a high performance optical device inaccordance with the present invention.

The initial steps for this alternative process flow parallel those shownpreviously in FIGS. 15F-H. In FIG. 16A, however, a continuous oxidelayer 1600 is deposited directly on top of conducting layer combination1514.

In FIG. 16B, a first photoresist mask 1602 is patterned over the oxidelayer, exposing openings 1604 on either side of hinge 1508. Portions ofthe exposed oxide layer 1600, conducting layer 1514, and silicon layer1532 underlying openings 1604 are then removed by etching, to define thehinge portion 1508.

In FIG. 16C, the first photoresist mask is stripped, and replaced with asecond photoresist mask 1610. Second photoresist mask 1610 is spun suchthat it penetrates into the gaps 1604 previously defined on either sideof the hinge structure 1508, but is patterned such that it is excludedover hinge 1508. Then, oxide material overlying the hinge 1508 exposedby the second mask 1610, is etched and removed.

In FIG. 16D, the second photoresist mask is stripped, and then replacedwith a third photoresist layer patterned in a mask 1620. Only upperregions 1620 a of the third photoresist mask 1620 are then developed toa certain depth corresponding to the thickness of the third photoresistlayer, but not including the combined additional depth offered by thehinge gaps, conducting layer 1514, and the oxide layer 1600.

In FIG. 16E, the upper portions of the third photoresist layer areremoved, leaving deeper portions 1620 b remaining within the gapsbetween the hinge portions of the silicon layer. An aluminum layer 1630is then deposited over the oxide and the underdeveloped photoresist.

As also shown in FIG. 16E, a fourth photoresist mask 1640 is thenpatterned over the Al layer 1630, leaving gaps 1642 exposing inter-pixelregions.

In FIG. 16F, the aluminum layer 1640, the oxide 1630, the conductinglayer 1514, the silicon layer 1532 are then etched in the inter-pixelregions exposed by the fourth photoresist mask, to define the reflectingsurface 1601. Also during this etching step, top portions of the oxidewalls 1503 are removed by etching to recess them below the place of thereflecting surface. Again, the posts are not affected by this etchingstep and retain their full height to support the reflecting surface ofthe pixel over the underlying CMOS substrate.

Also shown in FIG. 16F is the final photoresist stripping step, whereinmaterial from the third and fourth photoresist masks is removed, toreveal the stack 1603 comprising aluminum reflecting surface 1601suspended over space 1650 overlying the hinge defined by the adjacentopenings in the silicon layer 1532.

The alternative embodiment shown above and described in connection withFIGS. 16A-F, offers the advantage of a more closed and solid reflectingsurface, lacking the recesses of the first described embodiment. Thisalternative embodiment also requires the removal of smaller volumes ofphotoresist from less closed-in locations more accessible to plasma,thereby shortening duration of the photoresist removal steps.

While the above is a complete description of various specificembodiments of the invention, the above description should not be takenas limiting the scope of the invention as defined by the claims.

1. A method for fabricating a reflecting pixel, the method comprising: providing a silicon layer bearing a conducting layer and supported by an underlying post over a CMOS substrate; etching through the conducting layer and the silicon layer in gaps of a first photoresist mask to define openings adjacent to a moveable hinge portion in the silicon layer; depositing a reflecting material within via holes defined by a second photoresist mask patterned over the conducting layer; and removing the second photoresist mask to leave the reflecting material supported over the conducting layer and hinge by projections at the former location of the via holes.
 2. The method of claim 1 further comprising: patterning a third photoresist mask over the reflecting material, to expose inter-pixel regions; etching the reflecting material and the silicon layer in inter-pixel regions to define discrete pixels; and removing the second and third photoresist masks in a same step.
 3. The method of claim 2 wherein the CMOS substrate further comprises raised walls in the inter-pixel regions, the method further comprising etching the raised walls during the step of etching the reflecting material and the silicon layer in inter-pixel regions.
 4. The method of claim 1 wherein providing the silicon layer comprises providing a silicon-on-insulator (SOI) substrate, and then removing insulator material and backside silicon to produce the silicon layer.
 5. The method of claim 1 wherein depositing the reflecting material comprises depositing aluminum.
 6. The method of claim 1 further comprising forming an adhesion component of the conducting layer between the reflecting material and the silicon layer.
 7. A method for fabricating a reflecting pixel, the method comprising: providing a silicon layer supported by an underlying post over a CMOS substrate; forming a dielectric layer over the silicon layer; etching through the dielectric layer and the silicon layer in gaps of a first photoresist mask to define openings adjacent to a moveable hinge portion in the silicon layer; removing the dielectric layer over the moveable hinge; forming photoresist material within the openings; depositing a reflecting material over the dielectric and the photoresist material; and removing the photoresist material to leave the reflecting material separated from the moveable hinge by a space.
 8. The method of claim 7 further comprising: patterning a second photoresist mask over the reflecting material, to expose inter-pixel regions; etching the reflecting material, the dielectric layer, and the silicon layer in inter-pixel regions to define discrete pixels; and removing the second photoresist mask and the reflecting material in a same step.
 9. The method of claim 8 wherein the CMOS substrate further comprises raised walls in the inter-pixel regions, the method further comprising etching the raised walls during the step of etching the reflecting material and the silicon layer in inter-pixel regions.
 10. The method of claim 7 wherein providing the silicon layer comprises providing a silicon-on-insulator (SOI) substrate, and then removing insulator material and backside silicon to produce the silicon layer.
 11. The method of claim 7 wherein depositing the reflecting material comprises depositing aluminum.
 12. The method of claim 7 wherein removing the dielectric from over the hinge comprises: patterning a third photoresist mask to expose a portion of the dielectric material overlying the hinge; and etching the portion.
 13. The method of claim 7 wherein forming the dielectric layer comprises depositing silicon oxide.
 14. The method of claim 7 wherein forming the photoresist material within the openings comprises: forming photoresist over the oxide; developing only upper regions of the photoresist; and removing the developed upper regions of the photoresist to leave undeveloped lower regions of the photoresist within the openings.
 15. The method of claim 7 further comprising forming a conducting layer between the reflecting material and the silicon layer.
 16. A reflecting structure comprising a CMOS substrate comprising an electrode; a first post and a second post each of the first post and the second post being coupled to the CMOS substrate wherein the first post and the second post overlie the CMOS substrate; a moveable stack overlying each of the first post and the second post the moveable stack comprising: a silicon layer defining: a moveable hinge portion extending along a diagonal line between the first post and the second post; and a mirror support portion; a plurality of supporting structures coupled to the mirror support portion; and a reflecting surface supported by and overlying the plurality of supporting structures wherein the reflecting surface is free from contact with the moveable hinge portion.
 17. The reflecting structure of claim 16 wherein the reflecting surface is supported over the moveable hinge by integral downward projections of the reflecting surface.
 18. The reflecting structure of claim 16 wherein the reflecting surface is supported over the moveable hinge by a dielectric layer defining a space over the hinge.
 19. The reflecting structure of claim 16 wherein the reflecting surface comprises aluminum.
 20. The reflecting structure of claim 16 wherein the reflecting surface overlies the posts and the moveable hinge structure. 